• image of 晶体管 - 双极性晶体管(BJT)- 单个> PDTB114ETR
  • image of 晶体管 - 双极性晶体管(BJT)- 单个> PDTB114ETR
PDTB114ETR
PDTB114ET - 500 MA, 50 V PNP RES
-
Bulk
0
-
image of 晶体管 - 双极性晶体管(BJT)- 单个> PDTB114ETR
image of 晶体管 - 双极性晶体管(BJT)- 单个> PDTB114ETR
PDTB114ETR
PDTB114ETR
Transistors - Bipolar (BJT) - Single
NXP Semiconductors
PDTB114ET - 500 MA, 50 V PNP RES
-
Bulk
0
-
TYPEDESCRIPTION
MfrNXP Semiconductors
Series-
PackageBulk
Product StatusObsolete
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition140 MHz
Power - Max320 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageTO-236AB
Base Product NumberPDTB114
captcha

+86-755-23579903

sales@emi-ic.com
0