• image of 晶体管 - 双极(BJT)- 单,预偏置> NSVMMUN2133LT1G
  • image of 晶体管 - 双极(BJT)- 单,预偏置> NSVMMUN2133LT1G
NSVMMUN2133LT1G
TRANS PREBIAS PNP 0.246W SOT23
-
Tape & Reel (TR) Cut Tape (CT)
32039
-
image of 晶体管 - 双极(BJT)- 单,预偏置> NSVMMUN2133LT1G
image of 晶体管 - 双极(BJT)- 单,预偏置> NSVMMUN2133LT1G
NSVMMUN2133LT1G
NSVMMUN2133LT1G
Transistors - Bipolar (BJT) - Single, Pre-Biased
onsemi
TRANS PREBIAS PNP 0.246W SOT23
-
Tape & Reel (TR) Cut Tape (CT)
32039
-
TYPEDESCRIPTION
Mfronsemi
Series-
PackageTape & Reel (TR)
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Power - Max246 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Base Product NumberNSVMMUN2133
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